Weight |
0.01 kg
|
Case |
TO106 |
Type |
Transistor Silicon NPN |
Manufacturer |
National Semiconductor - NSC |
Vbr CBO |
30 |
Vbr CEO |
20 |
Max. PD (W) |
250m |
hfe |
120= |
Polarity |
NPN |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
125 |
@Ic (A) |
1.0m |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.3 W |
Maximum Collector-Base Voltage |Vcb| |
30 V |
Maximum Collector-Emitter Voltage |Vce| |
30 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
0.03 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
1 pF |
Transition Frequency (ft): |
250 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
86829 |