| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO106 |
| Manufacturer |
National Semiconductor - NSC |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
250m |
| hfe |
120= |
| Polarity |
NPN |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.03 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
1 pF |
| Transition Frequency (ft): |
250 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
86829 |