BF333

SKU: BF333

BF333 Transistor Silicon NPN CASE: X09 MAKE: ATES

Datasheet

BF333 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	BF333D
Type	Transistor Silicon NPN
Case	X09
Manufacturer	ATES
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	220m
Derate (Amb) (W/°C)	2.2m
hfe	67
Ic Max. (A)	30m
Polarity	NPN
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	1.0m
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	1.7 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	36
SKU	736910

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