Weight |
0.01 kg
|
Case |
TO126 |
Type |
Transistor Silicon NPN |
Manufacturer |
NXP Semiconductors |
Vbr CBO |
300 |
Vbr CEO |
250 |
Max. PD (W) |
6.0 |
Min hFE |
45- |
Ic Max. (A) |
100m |
@Ic (test) (A) |
20m |
Icbo Max. @Vcb Max. (A) |
50n |
Polarity |
NPN |
Tr Max. (s) |
500n |
R(sat) (Û) |
55m |
Derate Above 25°C |
100m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
10 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
6 W |
Maximum Collector-Base Voltage |Vcb| |
300 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Forward Current Transfer Ratio (hFE), MIN |
45 |
SKU |
115649 |