| BF470 Datasheet |
| Type | Transistor Silicon PNP | |
| Case | TO126 | |
| Manufacturer | NXP Semiconductors | |
| Vbr CBO | 250 | |
| Vbr CEO | 250 | |
| Max. PD (W) | 1.8 | |
| Derate (Amb) (W/°C) | 50m | |
| Min hFE | 50 | |
| Ic Max. (A) | 100m | |
| @Ic (test) (A) | 25m | |
| Icbo Max. @Vcb Max. (A) | 10n | |
| Polarity | PNP | |
| R(sat) (Û) | 800- | |
| Trans. Freq (Hz) Min. | 60M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 20 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 2 W | |
| Maximum Collector-Base Voltage |Vcb| | 250 V | |
| Maximum Collector-Emitter Voltage |Vce| | 250 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Collector Capacitance (Cc) | 1.8 pF | |
| Transition Frequency (ft): | 60 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 50 | |
| SKU | 20702 | |