The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BF470

BF470

SKU: BF470
BF470 is a silicon PNP high-voltage transistor in a TO-126 (SOT-32) plastic package. It has −250 V VCBO/VCEO ratings, −100 mA peak collector current, 1.8 W total power dissipation, hFE minimum 50 and transition frequency minimum 60 MHz, suited for Class-B video output and high-voltage IF output stages.
Price:
£9.59 Inc. VAT (£7.99 Ex. VAT)
£9.59 Inc. VAT (£7.99 Ex. VAT)
Qty
  • Last 628 pieces Ready to Ship
  • More pieces shipped in 14 days
?
Datasheet
BF470 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer NXP Semiconductors
Vbr CBO 250
Vbr CEO 250
Max. PD (W) 1.8
Derate (Amb) (W/°C) 50m
Min hFE 50
Ic Max. (A) 100m
@Ic (test) (A) 25m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
R(sat) (Û) 800-
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 140
@VCE (V) 20
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 1.8 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 20702
Back