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BFG410W
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BFG410W

SKU: BFG410W
BFG410W Transistor Silicon NPN CASE: SOT343 MAKE: Philips
Datasheet
BFG410W Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT343
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.054 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Collector-Emitter Voltage |Vce| 4.5 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.012 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 22000 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 136509
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