BFG67

SKU: BFG67

BFG67 Transistor Silicon NPN CASE: TO251 MAKE: Philips

Datasheet

BFG67 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO251
Manufacturer	Philips
Vbr CBO	20
@Freq. (test)	2.0G
@Ic (A)	15m
@Ic (A)	15m
Mat.	Silicon Logic
Noise Fig.	3.0
Oper. Gain Typ (S21)	10
Polarity	NPN
PD Max. (W)	300m
S11 Deg. (Typ)	140
S11 Mag Typ.	.45
S22 Deg. Typ.	-98
S22 Mag Typ.	.25
@VDS (VCE) (test) (V)	8.0
Coll. (or drain) Current Max.	50m
@Freq. (test)	2.0G
@VCE (test)	8.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	4-26
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	0.5 pF
Transition Frequency (ft):	7500 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SMD Transistor Code	V3
SKU	136527

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