BFQ39

SKU: BFQ39

BFQ39 Transistor - CASE: TO39 MAKE: Mullard - Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Mullard - Philips
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	5.7
Min hFE	25-
Ic Max. (A)	1.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
R(sat) (Û)	15-
Derate Above 25°C	57m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	125
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	5.7 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	136624

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