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BFR35
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BFR35

SKU: BFR35
BFR35 Transistor Silicon NPN CASE: SOT23 MAKE: Siemens Semiconductors
Datasheet
BFR35 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Siemens Semiconductors
Vbr CEO 12
Max. PD (W) 200m
C(ob) (F) 700f
Derate (Amb) (W/°C) 1.2m
hfe 70
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 3.3G
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 125
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 0.7 pF
Transition Frequency (ft): 3000 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SMD Transistor Code GA
SKU 736217
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