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BFT19
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BFT19

SKU: BFT19
BFT19 Transistor Silicon PNP CASE: TO39 MAKE: Harris Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Harris Semiconductor
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 1.0
Derate (Amb) (W/°C) 28m
Min hFE 25
Ic Max. (A) 1.0
@Ic (test) (A) 30m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 100m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 116796
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