BFT35

SKU: BFT35

BFT35 Transistor Silicon PNP CASE: TO39 MAKE: Texas Instruments

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Texas Instruments
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	1.0
Derate (Amb) (W/°C)	34m
Max. hFE	300
Min hFE	50
Ic Max. (A)	5.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	136792

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