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BFT60
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BFT60

SKU: BFT60
BFT60 Transistor Silicon PNP CASE: TO39 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Texas Instruments
Vbr CBO 80
Vbr CEO 35
Max. PD (W) 800m
C(ob) (F) 8.0p
Derate (Amb) (W/°C) 4.5m
hfe 10
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 2.5u
Polarity PNP
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 136810
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