| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO122 |
| Manufacturer |
TIIB |
| Vbr CBO |
30 |
| Vbr CEO |
12 |
| Max. PD (W) |
150m |
| C(ob) (F) |
5p |
| Derate (Amb) (W/°C) |
1.2m |
| t(f) Max. (S) |
30n+ |
| hfe |
30 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
.50u |
| Polarity |
NPN |
| Tr Max. (s) |
20n |
| Trans. Freq (Hz) Min. |
300M |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
30m |
| Pinout Equivalence Number |
4-27 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
12 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
1279749 |