BFW57

SKU: BFW57

BFW57 SemiConductor - Case: X09 Make: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X09
Manufacturer	Philips
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	350m
Derate (Amb) (W/°C)	3.5m
hfe	110
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
Trans. Freq (Hz) Min.	130M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	735783

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