| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
X09 |
| Manufacturer |
Philips |
| Vbr CBO |
40 |
| Vbr CEO |
35 |
| Max. PD (W) |
350m |
| Derate (Amb) (W/°C) |
3.5m |
| hfe |
110 |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
500n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
130M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
35 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
12 pF |
| Transition Frequency (ft): |
80 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SKU |
115696 |