The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BFY56B

BFY56B

SKU: BFY56B
BFY56B Transistor Silicon NPN CASE: TO39 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Texas Instruments
Vbr CBO 80
Vbr CEO 55
Max. PD (W) 800m
C(ob) (F) 12p
Derate (Amb) (W/°C) 4.5m
hfe 70
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 80M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 115717
Back