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BLV11
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BLV11

SKU: BLV11
BLV11 Transistor Silicon NPN CASE: M174 MAKE: Philips
Datasheet
BLV11 Datasheet
Product specifications
Type Transistor Silicon NPN
Case M174
Manufacturer Philips
Vbr CEO 18
Max. PD (W) 36
Max. hFE 100
Min hFE 10
Ic Max. (A) 3.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 4.0m
Polarity NPN
R(sat) (Û) 222m
Derate Above 25°C 205m
Trans. Freq (Hz) Min. 850M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-32
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 36 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 32 pF
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 137768
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