| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO218 |
| Manufacturer |
Philips |
| Vbr CEO |
18 |
| Max. PD (W) |
53 |
| Max. hFE |
80 |
| Min hFE |
10 |
| Ic Max. (A) |
2.7 |
| Icbo Max. @Vcb Max. (A) |
5m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
900M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
18 |
| Pinout Equivalence Number |
4-32 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
53 W |
| Maximum Collector-Base Voltage |Vcb| |
36 V |
| Maximum Collector-Emitter Voltage |Vce| |
18 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
8 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
80 pF |
| Transition Frequency (ft): |
450 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
| SKU |
137829 |