| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO218 |
| Manufacturer |
Philips |
| Vbr CEO |
30 |
| Max. PD (W) |
10 |
| Max. hFE |
40 |
| Min hFE |
20 |
| Ic Max. (A) |
650m |
| Icbo Max. @Vcb Max. (A) |
.5m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
3.5G |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
30 |
| Pinout Equivalence Number |
4-32 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.65 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
7 pF |
| Transition Frequency (ft): |
3500 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
81758 |