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BLW50F
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BLW50F

SKU: BLW50F
BLW50F Transistor Silicon NPN CASE: M174 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case M174
Manufacturer Philips
Vbr CEO 55
Max. PD (W) 94
Max. hFE 100
Min hFE 15
Ic Max. (A) 2.5
@Ic (test) (A) 1.2
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
Trans. Freq (Hz) Min. 490M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-32
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 94 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 137833
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