BLX35

SKU: BLX35

BLX35 Transistor Silicon NPN CASE: TO114 MAKE: Transitron Electronic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO114
Manufacturer	Transitron Electronic
Vbr CEO	100
Max. PD (W)	350
Max. hFE	120
Min hFE	30
Ic Max. (A)	80
@Ic (test) (A)	30
Polarity	NPN
R(sat) (Û)	43m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	300 W
Maximum Collector-Base Voltage \|Vcb\|	145 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	80 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	586596

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