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BLY55
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BLY55

SKU: BLY55
BLY55 Transistor Silicon NPN CASE: TO60 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO60
Manufacturer Philips
Vbr CEO 20
Max. PD (W) 10
Max. hFE 60-
Min hFE 10
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 450M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 372430
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