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BR100D
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BR100D

SKU: BR100D
BR100D Transistor Silicon NPN CASE: TO60 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO60
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 35
Max. hFE 200
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 333m
Derate Above 25°C 250m
Trans. Freq (Hz) Min. 300M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1282864
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