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BSS19
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BSS19

SKU: BSS19
BSS19 Transistor Silicon NPN CASE: SOT33 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case SOT33
Manufacturer Texas Instruments
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 225m
C(ob) (F) 2.0p
Derate (Amb) (W/°C) 1.8m
hfe 30
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 150
@Ic (A) 4.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 138411
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