BSS63L

SKU: BSS63L

BSS63L Transistor Silicon PNP CASE: TO236 MAKE: Motorola Semiconductor

Datasheet

BSS63L Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Motorola Semiconductor
Vbr CBO	110
Vbr CEO	100
Max. PD (W)	225m
Derate (Amb) (W/°C)	1.8m
hfe	30
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	50M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	25m
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.225 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SMD Transistor Code	BM
SKU	1248945

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