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BSS80
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BSS80

SKU: BSS80
BSS80 Transistor Silicon PNP CASE: TO236 MAKE: Siemens Semiconductors
Datasheet
BSS80 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 350m
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 2.8m
t(f) Max. (S) 30n
hfe 40
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 140
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 735102
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