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BSS80B
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BSS80B

SKU: BSS80B
BSS80B Transistor Silicon PNP CASE: TO236 MAKE: Siemens Semiconductors
Datasheet
BSS80B Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 225m
C(ob) (F) 8.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 1.8m
t(f) Max. (S) 30n
hfe 40
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.88 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code CH_CHs
SKU 408127
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