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BSS80C
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BSS80C

SKU: BSS80C
BSS80C Transistor Silicon PNP CASE: TO236 MAKE: Siemens Semiconductors
Datasheet
BSS80C Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 225m
C(ob) (F) 8.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 1.8m
t(f) Max. (S) 30n
hfe 100
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code CJ_CJs
SKU 735101
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