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BSS82
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BSS82

SKU: BSS82
BSS82 Transistor Silicon PNP CASE: TO236 MAKE: Siemens Semiconductors
Datasheet
BSS82 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 350m
hfe 300=
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 40n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 408130
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