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BSV17
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BSV17

SKU: BSV17
BSV17 Transistor Silicon PNP CASE: TO39 MAKE: European Make
Datasheet
BSV17 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer European Make
Vbr CBO 90
Vbr CEO 80
Max. PD (W) 7.0
Derate (Amb) (W/°C) 40m
t(f) Max. (S) 15n
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Tr Max. (s) 15n
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 116810
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