BSV52R

SKU: BSV52R

BSV52R Transistor Silicon NPN CASE: TO236 MAKE: NXP Semiconductors

Datasheet

BSV52R Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	NXP Semiconductors
Vbr CBO	20
Vbr CEO	12
Max. PD (W)	200m
Derate (Amb) (W/°C)	1.6m
t(f) Max. (S)	18n+
hfe	40
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Tr Max. (s)	12n
t(stor) Max. (S)	13n
Trans. Freq (Hz) Min.	400M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	12 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	B4
SKU	372521

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