BSW20VI

BSW20VI

SKU: BSW20VI
BSW20VI Transistor Silicon PNP CASE: TO92 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Generic
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 280m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 2.2m
hfe 40
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.001 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1247333
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