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BSW27
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BSW27

SKU: BSW27
BSW27 Transistor Silicon NPN CASE: TO39 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Texas Instruments
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 800m
C(ob) (F) 10p
Derate (Amb) (W/°C) 4.5m
t(f) Max. (S) 85n+
hfe 30
Ic Max. (A) 1
Icbo Max. @Vcb Max. (A) .50u
Polarity NPN
Tr Max. (s) 40n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 175
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 138536
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