BSW29

SKU: BSW29

BSW29 Transistor Silicon NPN CASE: TO39 MAKE: Texas Instruments

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Texas Instruments
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	1.0
t(f) Max. (S)	85n+
Min hFE	35
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	700n
Polarity	NPN
Tr Max. (s)	40n
R(sat) (Û)	350m
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	1 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	138538

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