BSX35

SKU: BSX35

BSX35 Transistor Silicon PNP CASE: TO18 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Generic
Vbr CBO	6.0
Vbr CEO	6.0
Max. PD (W)	300m
C(ob) (F)	1.8p
t(on) Delay (S)	30n
Derate (Amb) (W/°C)	1.7m
t(f) Max. (S)	60n+
hfe	70
Icbo Max. @Vcb Max. (A)	20n
Polarity	PNP
Tr Max. (s)	60n
Trans. Freq (Hz) Min.	700M
@VCE (test) (V)	.30
Oper. Temp (°C) Max.	175
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	6 V
Maximum Collector-Emitter Voltage \|Vce\|	6 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	138597

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