BSX47-10

SKU: BSX47-10

BSX47-10 is a silicon NPN medium-power transistor in a TO-39 metal package. It is suited for general industrial applications and offers a maximum collector current of 1 A and a maximum collector‑emitter voltage of 80 V.

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£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

BSX47-10 Datasheet

BSX47-10 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	NXP Semiconductors
Vbr CEO	80
Max. PD (W)	5.0
t(f) Max. (S)	15n
Max. hFE	160
Min hFE	63
Ic Max. (A)	1.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Tr Max. (s)	15n
R(sat) (Û)	1.8
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	63
SKU	79921

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