Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Case |
TO18 |
Vbr CBO |
25 |
Vbr CEO |
25 |
Max. PD (W) |
300m |
C(ob) (F) |
8.0p |
t(on) Delay (S) |
20n- |
Derate (Amb) (W/°C) |
2.0m |
t(f) Max. (S) |
50n- |
hfe |
130 |
Ic Max. (A) |
200m |
Icbo Max. @Vcb Max. (A) |
500n |
Polarity |
NPN |
Tr Max. (s) |
50n- |
t(stor) Max. (S) |
200n- |
Trans. Freq (Hz) Min. |
300M |
@VCE (test) (V) |
4.5 |
Oper. Temp (°C) Max. |
175 |
@Ic (A) |
2.0m |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.3 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.02 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
8 pF |
Transition Frequency (ft): |
150 MHz |
Forward Current Transfer Ratio (hFE), MIN |
75 |
SKU |
138621 |