Weight |
0.01 kg
|
Manufacturer |
NXP Semiconductors |
Case |
TO39 |
Type |
Transistor Silicon NPN |
Vbr CBO |
60 |
Vbr CEO |
40 |
Max. PD (W) |
5.0 |
Max. hFE |
100 |
Min hFE |
40 |
Ic Max. (A) |
3.0 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
100m |
Polarity |
NPN |
Tr Max. (s) |
300n |
Derate Above 25°C |
28m |
Trans. Freq (Hz) Min. |
70M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
1.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
5 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
40 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
3 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
70 pF |
Transition Frequency (ft): |
30 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
408278 |