The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BSX63-6
View detailed images (13)

BSX63-6

SKU: BSX63-6
BSX63-6 Transistor Silicon NPN CASE: TO39 MAKE: Generic
Datasheet
BSX63-6 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Siemens Semiconductors
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 5.0
t(f) Max. (S) 1.5u+
Max. hFE 100
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 300n
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 735063
Back