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BTD1857AI3
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BTD1857AI3

SKU: BTD1857AI3
BTD1857AI3 Transistor Silicon NPN CASE: TO251 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 1426474
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