BTD5510F3
View detailed images (1)

BTD5510F3

SKU: BTD5510F3
BTD5510F3 Transistor Silicon NPN CASE: TO263-3L MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO263-3L
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 3000
SKU 1426511
Back