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BU123
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BU123

SKU: BU123
BU123 Transistor Silicon NPN CASE: TO3 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer SGS Thomson
Vbr CEO 180
Max. PD (W) 50
Max. hFE 250
Min hFE 25
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Polarity NPN
R(sat) (Û) 930m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 75#
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 115780
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