BU207A

SKU: BU207A

BU207A Transistor Silicon NPN CASE: TO3 MAKE: Betts

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Betts
Vbr CEO	600
Max. PD (W)	12
t(f) Max. (S)	.70u
Min hFE	2.2
Ic Max. (A)	7.5
@Ic (test) (A)	4.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	1.1
Derate Above 25°C	625m
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	125
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	12 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	115 °C
Collector Capacitance (Cc)	125 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	2.5
SKU	139419

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