| Weight |
0.01 kg
|
| Case |
TO3 |
| Type |
Transistor Silicon NPN |
| Manufacturer |
ST Microelectronics - STM |
| Vbr CEO |
700 |
| Max. PD (W) |
13 |
| t(f) Max. (S) |
400n |
| Min hFE |
2.3 |
| Ic Max. (A) |
5.0 |
| @Ic (test) (A) |
4.5 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
NPN |
| Tr Max. (s) |
700n |
| R(sat) (Û) |
222m |
| Derate Above 25°C |
625m |
| Trans. Freq (Hz) Min. |
4.0M |
| Oper. Temp (°C) Max. |
115 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
12.5 W |
| Maximum Collector-Base Voltage |Vcb| |
1500 V |
| Maximum Collector-Emitter Voltage |Vce| |
700 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
8 A |
| Max. Operating Junction Temperature (Tj) |
115 °C |
| Collector Capacitance (Cc) |
125 pF |
| Transition Frequency (ft): |
4 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
2 |
| SKU |
20613 |