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BU211
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BU211

SKU: BU211
BU211 Transistor Silicon NPN CASE: TO3 MAKE: Siemens Semiconductors
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Siemens Semiconductors
Vbr CBO 600
Vbr CEO 300
Max. PD (W) 85
Min hFE 5.0
Ic Max. (A) 12
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 2.5
Pinout Equivalence Number 4-30
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 5
SKU 82485
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