Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
National Semiconductor - NSC |
Case |
TO3 |
Vbr CEO |
800 |
Max. PD (W) |
32 |
t(f) Max. (S) |
700n |
Ic Max. (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
1.0m |
Polarity |
NPN |
Derate Above 25°C |
400m |
Oper. Temp (°C) Max. |
125 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
125 W |
Maximum Collector-Base Voltage |Vcb| |
2000 V |
Maximum Collector-Emitter Voltage |Vce| |
800 V |
Maximum Collector Current |Ic max| |
10 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
115788 |