The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BU307F
View detailed images (12)

BU307F

SKU: BU307F
BU307F Transistor Silicon NPN CASE: SOT186 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Philips
Vbr CEO 700
Max. PD (W) 20
t(f) Max. (S) 700n
Max. hFE 50
Min hFE 15
Ic Max. (A) 8.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Tr Max. (s) 1.0u
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 700 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 139524
Back