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BU323P
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BU323P

SKU: BU323P
BU323P Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Motorola Semiconductor
Vbr CEO 200
Max. PD (W) 125
t(f) Max. (S) 15u
Min hFE 300
Ic Max. (A) 50
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
t(stor) Max. (S) 15u
Derate Above 25°C 1.0
@VCE (test) 6.0
Oper. Temp (°C) Max. 200
Pinout Equivalence Number 4-100
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 350 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 610638
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