| Weight |
0.01 kg
|
| Type |
Semiconductor |
| Case |
TO3 |
| Manufacturer |
Generic |
| Vbr CEO |
400 |
| Max. PD (W) |
90 |
| t(f) Max. (S) |
300n- |
| Min hFE |
30 |
| Ic Max. (A) |
6.0 |
| @Ic (test) (A) |
600m |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
NPN |
| R(sat) (Û) |
4.0 |
| Derate Above 25°C |
600m |
| Trans. Freq (Hz) Min. |
6.0M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
60 W |
| Maximum Collector-Base Voltage |Vcb| |
900 V |
| Maximum Collector-Emitter Voltage |Vce| |
400 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
6 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Transition Frequency (ft): |
4 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
16719 |