| Weight |
0.01 kg
|
| Case |
TO220 |
| Type |
Transistor Silicon NPN |
| Manufacturer |
NTE Electronics |
| Vbr CBO |
400 |
| Vbr CEO |
200 |
| Max. PD (W) |
60 |
| Min hFE |
10 |
| Ic Max. (A) |
7.0 |
| @Ic (test) (A) |
5.0 |
| Icbo Max. @Vcb Max. (A) |
5.0m |
| Polarity |
NPN |
| Tr Max. (s) |
750n |
| R(sat) (Û) |
200m |
| Derate Above 25°C |
480m |
| Trans. Freq (Hz) Min. |
10M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
1.2 |
| Pinout Equivalence Number |
4-33 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
60 W |
| Maximum Collector-Base Voltage |Vcb| |
400 V |
| Maximum Collector-Emitter Voltage |Vce| |
400 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
10 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
7.5 |
| SKU |
20205 |