Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Vbr CBO |
280 |
Max. PD (W) |
50 |
Min hFE |
10 |
Ic Max. (A) |
8.0 |
@Ic (test) (A) |
5.0 |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
25M |
@VCE (V) |
1.5 |
Pinout Equivalence Number |
3-16 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
50 W |
Maximum Collector-Base Voltage |Vcb| |
280 V |
Maximum Collector-Emitter Voltage |Vce| |
175 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
12 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
10 MHz |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
84916 |